Gayatri Rane

Comparison between sine wave, square wave and Dynamic Reverse Pulsing modes for magnetron sputtering

A previous AE blog, Dynamic Reverse Pulsing – What About Duty Cycle?, discussed reactive sputter deposition of insulating thin films in large-area coaters, describing the benefits of using the Dynamic Reverse Pulse (DRP) power-delivery mode over the bipolar (BP) mode of dual magnetron sputtering. In DRP mode , dual targets are bipolar pulsed against an explicit anode and the duty cycle can be varied so that the polarity is positive on the target for a shorter time during pulsing. This allows clearing of charge build-up on the targets. In our studies, DRP mode showed increased deposition rate and reduced substrate temperature when compared to similar depositions with the BP mode.

Sputter deposition characteristics of indium tin oxide (ITO) from compound targets for applications as a transparent conductive oxide (TCO) have been widely investigated to find deposition processes that optimize film properties

A previous blog showed that Dynamic Reverse Pulsing (DRP) mode offers several benefits to reactive sputtering of SiO2 through the reduction of substrate heat load by about 12% and delivered a 10% increase in deposition rate when compared to conventional bipolar pulsed (BP) dual-magnetron sputtering. DRP mode halves the power applied to each magnetron and shares the pulsing with an explicit anode,

With new power delivery technologies and techniques, Advanced Energy keeps pace with today’s magnetron sputtering requirements, including the rapid rise in the use of rotatable cylindrical targets and the ever-growing need for thermal-load control onto sensitive substrates.

Indium gallium zinc oxide (InGaZnO or for short IGZO), first proposed in 2003, has become a leading candidate for transparent semiconductor thin film transistors (TFT), and rapidly driving innovations within TFTs due to its high performance and compatibility with diverse flat panel display (FPD) technologies.