Unleash the Power: Catapulting Impedance Matching into a New Era

This year marks 50 years since the fabrication of the first research and development version of the 1 µm chip. The process was commercialized roughly 10 years later. Today, the industry is once again at an inflection point as we fast approach the sub-nanometer Angstrom Era of semiconductor manufacturing.

The first 2 nanometer (nm) class chips are expected to reach mass production by 2025, and Angstrom-scale architectures are not far behind. 20 Å (20x10^-10 m) is a little more than 10 silicon atoms – a single silicon atom measures ~2 Å. Dimension control at this scale requires high plasma stability during rapid and frequent pulse state transitions of longer recipes for next-gen manufacturing processes. Even the smallest of variations in process conditions can lead to significant deviations in feature precision and quality, which degrades process yield and chip performance.

Equipment is Key
Sub-2 nm dimension control requires high plasma stability during next-gen manufacturing processes. Achieving the process precision required at such small scales demands advanced techniques, as well as sophisticated equipment that enables cutting-edge process innovation. Recent advances in RF plasma power delivery have enabled the industry to approach the next inflection point.

For example, Figure 1 illustrates how Advanced Energy’s eVerest™ RF generator provides dynamic control of multi-level pulsing. This opens access to new energy regimes and distributions.

  
Fig 1a (left): Dynamic control of eVerest RF generator’s multi-level pulsing, with eight levels of pulse shown
Fig 1b (right): Fast pulsing rise and fall times improve etch and deposition rates

Next-generation impedance matching is also required to unleash the full capabilities of this RF power delivery technology.

Enter NavX
Launched in June 2024, the NavX™ impedance matching network is optimized for sub-2 nm fabrication. With enhanced tuning speed, sophistication and RF synchronization, it enables precise, repeatable plasma characteristic control across the rapid pulsing, frequent transitions, and longer recipes of next-gen processes.

Tuning to multi-level pulse states: AE’s proprietary Advanced Selectable Tuning algorithm allows accelerated processing for impedance matching to single or multiple pulse states by instantly reducing reflected power in processes with shorter RF on times.

Ultrafast tuning: Real-time power and impedance sensing eliminates output calculation delays.



Fig 2a (left): NavX’s Advanced Selectable Tuning enables impedance matching to multiple states and enables a lower reflected power
Fig 2b (right): With improved sensor calibration, NavX improves process control and precision, giving greater stability and yields
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In addition, NavX enables tight match-generator synchronization with AE’s eVerest RF generator with direct communication link, and the combination deliver the best-in-class RF delivery system (RFDS). This is the culmination of Advanced Energy’s more than 20 years of RFDS innovation. Tight match-generator synchronization eliminates tuning delays associated with separate match communications, while direct match-generator communication and AE’s proprietary Velocity Tuning algorithm optimize response speed for pulse sequences.

This RF delivery system’s +/-10% frequency range enables faster tuning and access to a wider impedance range, while scalable pulse sates open new energy regimes. In short, NavX unleashes the full multi-level pulsing capabilities of eVerest by generating communication directly within the match and closely synchronizing with the generator.

NavX and eVerest RFDS, along with a range of AE solutions for semiconductor manufacturing, were on display at SEMICON West 2024 this week. Specifications and information on NavX and how it is designed to optimize eVerest-based plasma power systems can be found on the NavX page of the Advanced Energy website.