功率输出系统

Forming a complete RF delivery system, the eVerest™ RF generator and NavX™ matching network propel process innovation as chips approach Angstrom scale geometries

チップサイズの微細化と高アスペクト比構造には、イオンエネルギーの高精度制御 が必要です

By maximizing the ability to tailor ion energy, the eVoS asymmetric bias waveform generator enables precise command of etch and deposition geometries at very small dimensions.

Innovate beyond the nanometer. The NavX™ matching network redefines tuning speed, sophistication, and RF synchronization for exacting plasma control across the most complex pulsing profiles

Asymmetric bias waveform generator for direct control of substrate voltage and ion energy